Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells
نویسندگان
چکیده
منابع مشابه
Stokes shift in quantum wells: Trapping versus thermalization.
Low temperature photoluminescence and photoluminescence excitation measurements have been performed in a set of InGaAs/GaAs samples with different indium molar fraction, well width, growth conditions and post-growth treatment. This has allowed to change in a controlled way the degree and source of disorder in the samples, thus resulting in an excitonic absorption linewidth varying between 1 and...
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Received November 28, 1989; accepted April 10, 1990 We use semi-insulating multiple quantum wells to combine the holographic properties of the photorefractive effect with the large resonant optical nonlinearities of quantum-confined excitons. GaAs-AlGaAs multiplequantum-well structures are made semi-insulating by proton implantation. The implant damage produces defects that are available to tra...
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InGaN/GaN multi-quantum wells (MQWs) are grown on (0001) sapphire substrates by metal organic chemical vapor deposition (MOCVD) with special growth parameters to form V-shaped pits simultaneously. Measurements by atomic force microscopy (AFM) and transmission electron microscopy (TEM) demonstrate the formation of MQWs on both (0001) and ([Formula: see text]) side surface of the V-shaped pits. T...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4940396